Dynamic Frequency Divider in Flexible a-IGZO TFT Technology
Tilo Meister, Member, IEEE, Koichi Ishida, Member, IEEE, Antony Sou, Corrado Carta, Member, IEEE,
Frank Ellinger, Senior Member, IEEE
Abstract – The implementation of a dynamic frequency divider in a fully-flexible amorphous Indium-Gallium-Zinc-Oxide (aIGZO) thin-film transistor (TFT) technology on a sub-15µm polyimide substrate is presented. This frequency divider is regenerative and is also known as Miller divider. In this work, it is implemented using only a Gilbert cell with minimum-size LO transistors. Including the bias network, it has only 8 transistors. Using a 6 V supply voltage, it operates up to 3.93 MHz, consumes 328 µW, and has a speed over power figure-of-merit (FOM) of 12.0 MHz/mW. To the best knowledge of the authors, this FOM is the highest reported for circuits in this class of flexible TFT technologies.